TRENCH CONTACT STRUCTURE BODY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A trench contact structure body is provided to carry out more efficient and integrated trench device isolation by using a semiconductor substrate as a region in which a Vcc node, a Vss node, or an interconnection node is formed. CONSTITUTION: A device isolation trench(200) is formed on a semiconductor substrate(100).The trench is filled with an insulation layer(300) and the insulation layer(300) has a contact hole(600) exposing the semiconductor substrate(100) forming a trench bottom. The contact hole(600) is filled with the conductive layer(300) and the conductive layer(300) is connected to the semiconductor substrate(100) forming the trench bottom. The conductive layer(300) uses any one selected from a group having a Vcc node, a Vss node, and an interconnection node.