COMPLEMENTARY BIPOLAR TRANSISTOR AND MANUFACTURING THESAME

摘要

PURPOSE: A complementary bipolar transistor and a method for manufacturing the same are provided to prevent a leakage current and reduce of a complementary bipolar transistor by forming the complementary bipolar transistor including a bipolar transistor, an integrated injection logic, a capacitor, and a polysilicon resistance, and an isolation region. CONSTITUTION: A partial oxide layer(231) is formed on a semiconductor substrate(100) by performing selectively an oxidation process. An active region is defined by forming the partial oxide layer(231). A multitude of diffusion layer is formed within the active region of the semiconductor substrate(100). A multitude of contact portion is formed on the diffusion layer to connect an electrode for transferring an external signal with the diffusion layer. A polysilicon layer is laminated thereon. The polysilicon layer is patterned. A polysilicon resistance layer(551) is formed on the partial oxide layer. A multitude of polysilicon electrode is formed by patterning the polysilicon layer(551).