| 摘要 |
PURPOSE: A conductive plug formation method is provided to reduce a thermal damage due to high temperature sputtering of Al-1%Si and a resistance of via chain by cleaning a contact hole using mixed solution of ozone and DI(deionized) water. CONSTITUTION: A contact hole is formed by etching a plurality of interlayer dielectrics(12,14,16) to expose a surface of lower wire(10). For removing a native oxide and a polymer, the resultant structure is cleaned by mixed solution of ozone and DI(deionized) water. A barrier layer(22) is formed. A first conductive material is firstly deposited to partially fill into the contact hole at room temperature, and a second conductive material is secondly deposited to entirely fill into the contact hole at high temperature, thereby forming a conductive plug.
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