| 摘要 |
PURPOSE: A method for forming an upper electrode is provided to reduce a leakage current and improve an interface property between a dielectric layer and the upper electrode by using sputtering in oxygen atmosphere. CONSTITUTION: A method comprises the steps of forming a first metal layer(22) on a dielectric layer(21) of capacitor by firstly sputtering method, and forming a second metal layer(23) on the first metal layer(22) by secondly sputtering method. The first sputtering is performed at 100% Ar atmosphere, and the second sputtering is performed in oxygen atmosphere contained O2. The first and the second metal layers(22,23) are composed of Pt, Ir, Ru, or Rh.
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