METHOD FOR MANUFACTURING SOI TRANSISTOR

摘要

PURPOSE: A method for manufacturing an SOI(Silicon On Insulator) transistor is provided to manufacture a transistor with a structure of an SOI. CONSTITUTION: A method for manufacturing an SOI transistor comprises the following steps. A first oxidation film with a hole of a constant depth is formed on a silicon substrate(100). A first gate conductive film is formed within the hole. A part of the oxidation film is etched to expose a predetermined portion of an upper portion of the first gate conductive film. A second oxidation film(140) is formed on the exposed portion of the first gate conductive film. A silicon film(150') with a constant thickness is formed on the first and the second oxidation films. A gate oxidation film(160) and a second gate conductive film are formed on the silicon film. A spacer(180) is formed on a side wall of the second gate conductive film. A source area(190) and a drain area(200) are formed on a selected area of the silicon film. A silicide layer( is formed on the second gate conductive film, the source area, and the drain area.