发明名称 METHOD FOR EXAMINING DEFECT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for examining defect of a semiconductor device is provided to eliminate noises when detecting the semiconductor device, by changing filter values in a process of detecting outer defect related to a mask pattern of the semiconductor device. CONSTITUTION: A method for examining defect of a semiconductor device compares pixels with neighboring patterns and detects defect which are not conformed. The defect examining method eliminates noises by making a gray level of a matrix array in a filter, which is used for finding out substantial defect. The gray level have over 70 in the middle and under 55 in the circumference.
申请公布号 KR20000027842(A) 申请公布日期 2000.05.15
申请号 KR19980045878 申请日期 1998.10.29
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 PARK, YONG JUN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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