发明名称 CHARGE PUMP FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE: A charge pump for semiconductor device is provided to make the transportation of charge smooth by using PMOS diode, and to achieve efficient pumping by removing the threshold voltage. CONSTITUTION: A power supply part(10) controls the supply of source voltage(Vdd) by a first PMOS(P1). A first charge pumping part(20) consists of a first capacitor(C1) for charge pumping in case that a first clock signal(CLK1) and a second PMOS(P2) to transmit charges to the first capacitor(C1). A second charge pumping part(30) consists of a second capacitor(C2) for charge pumping in case that a second clock signal(CLK2) and a third PMOS(P3) to transmit charges to the second capacitor. A third charge pumping part(40) consists of a third capacitor(C3) for charge pumping in case that the first clock signal(CLK1) and a fourth PMOS(P4) to transmit charges to the third capacitor. A fourth charge pumping part(50) consists of a fourth capacitor(C4) for charge pumping in case that the second clock signal(CLK2) and a fourth PMOS(P4) to transmit charges to the fourth capacitor. A first to a fourth control parts(12,22,32,42) control the operations of the first to the fourth PMOSs(P1,P2,P3,P4) respectively.
申请公布号 KR20000027824(A) 申请公布日期 2000.05.15
申请号 KR19980045858 申请日期 1998.10.29
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 JIN, KYONG CHEON
分类号 G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/40
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