SEMICONDUCTOR MEMORY DEVICES

摘要

PURPOSE: A semiconductor memory device is provided to reduce sub-threshold leakage currents by applying bias having different levels to cell plate in accordance with stand-by and active modes. CONSTITUTION: A power consumption due to sub-threshold leakage is reduced by controlling a cell plate voltage at stand-by mode. The memory device comprises a cell capacitor(22) having a plate node(10) and a storage node(12), a cell transistor(14) for connecting the cell capacitor(22) and a bit line(24) according to enable state of a word line(16), and a cell plate voltage controller(20). The cell plate voltage controller(20) is applied a bias for holding a gate-source voltage of the cell transistor(14) to a negative to the plate node(10) when the cell transistor(14) is turn-off (that is, stand-by mode).