METHOD FOR FORMING ANTI-REFLECTION LAYER OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An anti-reflection layer formation method is provided to effectively remove a high reflectance of conductive layer regardless of exposing wavelength by using a silicon-oxy-nitride(SiON). CONSTITUTION: A method comprises a step of depositing a silicon-oxy-nitride(SiON) on a conductive layer(24) used for electrodes or wiring, thereby forming an anti-reflection layer(25) made of the SiNO. The composites of the SiON anti-reflection layer(25) used as SiO2: Si3N4: amorphous silicon = 30-80 %: 10-30 %: 10-40 %. Also, the source gas used as SiH4 and N2O gas. The flow rate of the SiH4 and the N2O is controlled in that the reflective index of the anti-reflection layer(25) is to be 1.8-2.2.