METHOD FOR FORMING METAL WIRES OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal wire formation method is provided to easily secure an anti-corrosion margin by easily removing remained polymer and Cl using plasma etching including etching gas contained fluorine(F). CONSTITUTION: A metal film, such as aluminum(Al) or tungsten(W) is formed on an insulating layer(100), and then a metal pattern(104) used for metal wires is formed by etching the metal film using a photoresist pattern(106) as a mask. A polymer(108) is simultaneously formed at both sides of the metal pattern(104). By using plasma etching gas contained fluorine(F), the polymer(108) is etched. Then, the remained polymer(108) and the photoresist pattern(106) are removed by asking process.