| 摘要 |
PURPOSE: A sensing circuit for a flash memory device is provided to improve the performance of a product and to minimize a chip size by successively sensing a recovered data. CONSTITUTION: A flash cell block(15) stores an address to be recovered. A sensing means(10) senses data of the flash cell block(15). A latch means(14) latches data sensed by the sensing unit(10). The sensing unit(10) has a selecting unit(11), and first and second switching unit(12,13). PMOS and NMOS transistors(P1,N1) in the selecting unit(11) for receiving a control voltage(Vin) are connected between a power terminal(Vcc) and a ground voltage(Vss). First and second switching unit(12,13) receive eighth to first output signals(out_8 to out_1) and are connected to the output of the selecting unit(11). The latch unit(14) is connected to the first switching unit(12) and latches data sensed from the sensing unit(10), and outputs the latched data through eighth to first output terminals(Vout_8 to Vout_1). The flash cell block(15) is connected to the second switching unit(13) of the sensing unit(10).
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