THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To produce a thin film transistor substrate with few masks by patterning a protective film and a semiconductor layer at a time. SOLUTION: Gate wiring including a gate line 22, a gate electrode 24 and a gate pad 26 is formed on a substrate and maintenance wiring including a maintenance electrode line 28 and maintenance electrodes 27, 29 is formed. A gate insulating film, a semiconductor layer 42, an amorphous silicon layer and a metallic layer are laminated. The metallic layer is patterned to form data wiring 62, 64, 66. A photosensitive organic insulating film is laminated and the semiconductor layer 42, the gate insulating film and the organic insulating film are etched at a time to form a contact hole which exposes the drain electrode 64 and the data pad 66 and a contact hole which exposes the gate pad 26 in a protective film 72, the semiconductor layer 42 and the gate insulating film. The protective film 72, the semiconductor layer 42 and the gate insulating film are formed in the same shape so as to nearly cover the gate wiring 22, 24, 26 and the maintenance wiring 27-29.