发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To reduce a laser oscillation surface in fraction defective by a method, wherein a non-oxidized surface is made to serve as the laser oscillation surface of a ridge structure. SOLUTION: After an oxidation treatment is carried out, the entire surface of a mesa A' is coated again with an SiNx film as a protective insulating film. Then, only a protective insulating film and an SiNx thin film 7' formed on the narrow part A2' of the mesa A' are selectively removed to make a contact layer 6 exposed. Then, Ti/Pt/Au are vapor deposited over the entire surface of the mesa A' to form an upper electrode, furthermore the rear of a board 1 is polished, and then AuGeNi alloy is evaporated thereon to serve as a lower electrode. Joined wide parts A1' are cleaved at their center line into bars, and the bar is divided into devices by processing. At this point, a cleavage plane is located at the center line of the wide parts A1', so that a layer 4 is protected against oxidation even during thermal treatment. Therefor, a cleavage plane is a nonoxidized plane and is kept free of distortions due to oxidation and crackings due to cleavage, so that a laser oscillation surface can be reduced in fraction defective.
申请公布号 JP2000133877(A) 申请公布日期 2000.05.12
申请号 JP19980305609 申请日期 1998.10.27
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 YOKOUCHI NORIYUKI;IWAI NORIHIRO
分类号 H01S5/00;H01S5/10;H01S5/16;H01S5/20;H01S5/22;(IPC1-7):H01S5/22 主分类号 H01S5/00
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