| 摘要 |
PROBLEM TO BE SOLVED: To monitor accurately the real pressure in a plasma etching chamber by a method wherein a plasma having plasma molecules is fed in the chamber and the luminous intensity of one kind of the plasma molecule of the fed plasma is measured to convert the luminous intensity into the pressure in the chamber. SOLUTION: When an etching process for manufacturing a semiconductor device in a plasma etching chamber is executed, a semiconductor wafer is arranged in the plasma etching chamber. A plasma having plasma molecules selected from among plasma molecules of F, a CF2, a CO and the like is fed in the chamber. The luminous intensity of one kind of the plasma molecule of the fed plasma in the case of a prescribed wavelength having a prescribed relation with the plasma molecule is measured. The measured luminous intensity is converted into the pressure in the chamber. As a result, the real pressure in the chamber can be accurately measured.
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