| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacturing process of a semiconductor device. SOLUTION: A process wherein an impurity diffusion layer 4 to be used to control threshold voltage is performed by implanting ions, and a process wherein a high temperature heat treatment is performed for a short period to recover the crystal defect generated by the ion implantation, are performed continuously without performing heat treatment in this manufacturing method of a semiconductor device. Subsequently, an RTA treatment is performed to recover the crystal defect generated by ion implantation. The interlattice atoms, which may cause the crystal defect, can be diffused by the above mentioned RTA treatment, but the diffusion of the impurity diffusion layer are not diffused. Subsequently, a gate oxide film is formed.
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