SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To eliminate an external change-over switch, reduce the number of parts and improve a mount efficiency in a semiconductor integrated circuit device with a built-in nonvolatile memory. SOLUTION: There are provided a VPP sensing circuit 2 for detecting a high voltage input to a TEST/VPP terminal 3 and a terminal state-switching means for switching a state of the TEST/VPP terminal 3 in accordance with a SAVPP signal output from the sensing circuit 2. The terminal state-switching means is constituted of an N channel MOS transistor Q1 to a gate of which the SAVPP signal from the sensing circuit 2 is input via an inverter 4. Moreover, the transistor has a source connected to a ground voltage and a drain connected to the TEST/VPP terminal 3 via a pull down resistor R1.