| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having satisfactory contacts in electrical characteristics, by simultaneously boring contacts largely different in depth in the case having salicide treatment. SOLUTION: A field oxide film 201 and a gate electrode 202 are patterned and formed in order. After an oxide film is formed on the whole surface, a side wall 203 and a diffusion layer 204 are formed successively on the sidewall of the gate electrode. The gate electrode 202 is subjected to sputtering treatment of cobalt or the like. After that, a first nitride film is formed over the entire surface, a first interlayer film 205 is formed, and flattening is performed by using a CMP method. A second nitride film 210 is formed over the entire surface of a wiring 206 of an upper layer. The second nitride film 210, in the parts where contacts are to be formed, is eliminated. A contact 208 which reaches a first nitride film 209 on the gate electrode 202 and the wiring 206 and reaches the second nitride film 210 is bored, and then a contact 208 which reaches the part above the gate electrode 202 and the wiring 206 is bored at the same time by etching the nitride films 209, 210.
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