| 摘要 |
PROBLEM TO BE SOLVED: To make compatible the low on-resistance and high-speed turn-off characteristics of a bipolar transistor, when the electrodes of the bipolar transistor and a unipolar transistor are made of one layer of a metallic film and the wiring for connecting the bipolar transistor and the unipolar transistor is made of the one layer of the metallic film, by connecting through a wire bonding between the equipotential points of the electrodes or the wiring of the bipolar transistor and the unipolar transistor. SOLUTION: On a wiring 21 for connecting an emitter electrode 10a of an npn transistor BT2 and a drain electrode 11a of a p-channel MOS transistor UT3, an emitter wire 22 is made to contact with the near point to the electrode 10a and is so contacted with the near point to the electrode 11a via a short- circuit wire 22 as to perform stitch bondings. As a result, the wiring resistance between the emitter electrode 10a of a final stage and an E terminal is reduced so as enable making the on-voltage of the npn transistor BT2 reducible. Also, since the wiring resistance ranging to drain electrodes 11, 11a of transistors UT2, UT3 for extracting the base currents of transistors BT1, BT2 are also reduced, the base currents of the transistors BT1, BT2 are extracted quickly. |
