| 摘要 |
PROBLEM TO BE SOLVED: To reduce OSF(oxidation stacking fault) grown on the active SOI layer region, where a device is formed, resulted from a LOCOS, and to improve the characteristic of the element of an SOI device and the yield of production. SOLUTION: This manufacturing method of semiconductor device using an SOI substrate 1 contains a process wherein a crystal damage 8 is introduced into the SOI layer 3 of an etching region after an element isolated selective oxide mask has been etched, a process wherein a rapid heat treatment (RTA) is performed after introduction of crystal damage and a defect remains (9, 10) while the crystal defect of the SOI layer is being recovered sufficiently, and a process wherein a LOCOS is performed and an element isolating region 12 is formed by completely oxidizing the SOI layer including the defect.
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