| 摘要 |
PROBLEM TO BE SOLVED: To improve the level of movement of the electrolytic effect of a semiconductor device. SOLUTION: A silicon film 150 is formed on a base film 110 by a PECVD method, and an insulating film 170 constituted of a nitride silicon film is formed. The CVD silicon film 150 is obtained as a semiconductor thin film in which amorphous components and crystalline components coexist, and provided with a crystal structure in which amorphous parts exist between crystal particles, and the crystal particles are formed in a cylindrical structure with a substrate face as a bottom face. A CVD silicon film 150 is annealed by eximer lasers in a state that the insulating film 170 exists on the surface, so that a crystalline silicon film 151 can be formed. The insulating film 170 and the silicon film 151 are patterned like islands so that active layers 200, 300, and 310 can be formed. Thus, the surfaces of the active layers 200, 300, and 310 are maintained to be covered with island-shaped insulating films 222, 321, and 322 and the surfaces of the active layers can be prevented from being contaminated due to boron, or natural oxide film can be prevented from forming.
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