| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device without deterioration in etching rate or uniformity, by preventing the gas of a reaction product in etching liquid from being turned into air bubble and adhered on the surface of a substrate to be etched. SOLUTION: This method prepares a semiconductor substrate by etching a porous layer from adhered substrates. This method comprises at least processes (a) and (b), for preparing a first substrate having a porous layer 402 on the main surface side and a nonporous layer 403 on the porous layer 402, a process (c) for adhering the main face side of the first substrate with a second substrate 405, and processes (d) and (e) for immersing the porous layer 402 exposed on the second substrate 405 in etching solution in an etching bath, and for etching and removing the porous layer 402, while deaerating the etching liquid in the etching.
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