发明名称 METHOD FOR FORMING SOLID ELECTROLYTIC LAYER IN CAPACITOR ELEMENT FOR SOLID ELECTROLYTIC CAPACITOR
摘要 PROBLEM TO BE SOLVED: To considerably reduce costs forming a solid electrolytic layer by a method, wherein prior to a porous chip piece being dipped in a solid electrolyte forming aqueous solution such as a manganic nitrate aqueous solution, etc., after the chip piece is cooled, it is exposed to the atmosphere, or exposed to the atmosphere at high humidity. SOLUTION: A chip piece 1 is dipped in an anode oxidized liquid such as a phosphatic aqueous solution, etc., and in this state, an anode oxidization process is made between the chip piece 1 and the anode oxidization liquid such as a phosphatic aqueous solution, etc., whereby a dielectric film such as tantalum pentoxide, etc., is formed on a surface of metal powders in the chip piece 1. Next, after the chip piece 1 is cooled to about 0 deg.C, it is exposed to the atmosphere in which humidity is about 80% and temperature is about 30 deg.C, and the surface of metal powders in the chip piece 1 is set to a state of being moistened with an extremely small quantity of water up to the depth of the chip piece 1. Then, while this water does not dry out, after the chip piece 1 is impregnated in a manganic nitrate aqueous solution, it is sintered.
申请公布号 JP2000133554(A) 申请公布日期 2000.05.12
申请号 JP19980300890 申请日期 1998.10.22
申请人 ROHM CO LTD 发明人 NAKAMURA TAKAHIRO
分类号 H01G9/032;H01G9/052;(IPC1-7):H01G9/032 主分类号 H01G9/032
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