| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput as well as not to as adversely affect on the formation of other devices at forming of capacitive elements in case a step for forming a capacitor. SOLUTION: A method for manufacturing a semiconductor device has a step for forming insulating layers 22 and 23 on a semiconductor substrate 21, a step for forming a semiconductor film containing first impurities and dielectric film 26 and a conductive film 26 on the insulating films 22 and 23, a step for patterning the conductive film 26 and the dielectric film 25 for leaving parts in a capacity device forming region, a step for diffusing the first impurities contained in the semiconductor film 24 outside, excluding the region covered with the patterned conductive film 26 and the dielectric film 25, and a step for patterning the semiconductor film 2 to leave parts in a capacitive element forming region and other device forming regions. |
