| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved photoresist having sensitivity to short wavelength active radiation, superior resolving power, thermal stability and plasma etching resistance. SOLUTION: The negative type photoresist composition comprises an acid- setting resin system containing an alkali-soluble phenolic resin, aminoplast and a halogenated organic photo acid-generating compound. The photo acid- generating compound is contained in the photoresist composition by 0.1-10 wt.%, selectively absorbs actinic rays in the range of 210-299 nm and has compatibility with the acid-setting resin system. The photoresist composition is developable in a basic aqueous solution and a haloid acid is generated when the composition is irradiated with far UV so that the acid-setting resin system is crosslinked to form a thermally stable negative image under heating. |
