| 摘要 |
PROBLEM TO BE SOLVED: To enable stable contact hole etching and prevent the deterioration of electrical insulation of a buried oxide film layer, by excluding etching of the embedded oxide film layer which penetrates a contact region, with a stop film for etching. SOLUTION: In a manufacturing method of a semiconductor device, having an SOI structure constituted of a single crystal silicon layer on a surface, an embedded oxide film layer 4 and a retaining silicon substrate 5, an etching stopper film 20 which does not generate metal silicide reaction and has selectivity of etching to the embedded oxide film layer is formed on the interface between the single-crystal silicon layer on the surface and the embedded oxide film layer 4. In the process following this, an insulating film 11 on a source/ drain region on the stopper film layer 20 is bored, and a contact hole in an MOS integrated circuit is formed.
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