发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which the glass base is not cracked when a metal pipe is jointed to the glass base. SOLUTION: A semiconductor pressure sensor chip having a thin diaphragm 1a formed by making a recess is bonded to a base 2 having a through hole 2a for introducing pressure to the diaphragm 1a and soldered with the metal pipe 4 of a package through a metalized layer 8 formed on the opposite side of the base 2 thus obtaining a semiconductor pressure sensor. The through hole 2a of the base 2 is applied, at he corner part of the opening on the metal pipe 4, with a thin film coating 11 of the same material as that of the base 2 from above the metalized layer 8 such that the coating 11 reaches a specified depth on the inner wall of the through hole 2a.
申请公布号 JP2000131166(A) 申请公布日期 2000.05.12
申请号 JP19980298729 申请日期 1998.10.20
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SAITO HIROSHI;AKAI SUMIO;YASUDA MASAHARU;TAKAKURA NOBUYUKI
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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