| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for working a device to be observed for easily specifying the defective place of a semiconductor device. SOLUTION: This method is for working a silicon substrate 2 on whose surface a semiconductor integrated circuit formation area 34a in which a semiconductor integrated circuit is formed is provided so that this can be observed from the back face. At first, the back face of the silicon substrate 2 is ground so that one part of the back face of the silicon substrate 2 can be cut. Then, a hole H1 is started to be opened from the back face of the silicon substrate 2, and continued to be opened until an object 4 to be observed in the semiconductor circuit formation area 34a is exposed.
|
