发明名称 ELECTRON BEAM EXPOSING METHOD AND ELECTRON BEAM EXPOSURE SYSTEM
摘要 PROBLEM TO BE SOLVED: To prevent a distance between adjacent stripes from increasing by a method, wherein correction is gradually made by a plurality of stripes after a drifting amount is detected in a step of correcting the drift amount. SOLUTION: An electron beam exposure system comprises drift amount detecting means for measuring a reference mark to detect the drift amount of electron beam, and drift amount correcting means. Even when the reference mark is measured during plotting a chip to detect a beam drift amount d1, correction is made gradually, ranging over a plurality of succeeding stripes as indicated byΔ. Furthermore, in a step of correcting a drift amount, from a time until detecting the drift amount next to calculation and an exposure time of each stripe, number of stripes N to be exposed until the next step of detecting the drift amount is calculated, and the difference between an expected drift amount and a present drift correction amount in a next step of detecting the drift amount is set as dx, and correction is made by each dx/N ranging over N pieces of the stripes.
申请公布号 JP2000133567(A) 申请公布日期 2000.05.12
申请号 JP19980302605 申请日期 1998.10.23
申请人 ADVANTEST CORP 发明人 KAWAKAMI KENICHI
分类号 H01J37/04;H01J37/302;H01J37/304;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01J37/04
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