| 摘要 |
PROBLEM TO BE SOLVED: To reduce the chip size by providing a drain-side extended part and a source- side extended part both to serve as resistance parts, the drain-side extended part which is formed by extending a part of an active layer region toward a drain electrode side when viewed from a gate electrode side along the length of a gate, the source-side extended part being formed by extending a part of the active layer region toward a source electrode side along the length of the gate. SOLUTION: A drain-side extended part 28a is provided, which is formed by extending a part of an active layer region 28 of a semiconductor layer 10 toward a drain electrode 14 side when viewed from a gate electrode 18 along the length of a gate. A source-side extended part 28b is provided, which is formed by extending a part of the active layer region 28 toward the source electrode side along the length of the gate. The drain-side extended part 28a and the source-side extended part 28b are smaller in width than the gate along the length thereof. With this arrangement, each of the drain-side extended part 28a and the source-side extended part 28b serves as a resistance part so as to reduce the area of the resistance part. Therefore, it is possible to simplify the construction of the device as compared with the formation of a resistance part using a cap layer.
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