| 摘要 |
<p>PROBLEM TO BE SOLVED: To avoid damages on the structures necessary for the function of semiconductor chips by a method wherein an electrical insulating layer, which is provided on the conductive sidewalls of the chips, is formed by an anodic oxidation of the sidewalls. SOLUTION: Grooved recessed parts 8 are formed in the surface on the flat side of a wafer 1 provided adjacent to structures 2 in the boundary regions between semiconductor chips 3 using a saw-toothed tool, whereby the sidewalls of these chips 3 are exposed. Then, an electrolyte 9 for filling these recessed parts 8 is deposited on the surface of the wafer 1. As the electrolyte, for example, a sulfuric acid, an oxalic acid or a permanganic acid potassium dissolved in water is used. For an anodic oxidation of the sidewalls, which are exposed through the recessed parts 8, of the chips 3, an anodized voltage is applied between the electrolyte 9 and a substrate 4 of the wafer 1. After several minutes, a semiconductor layer, which is located on the surfaces of the sidewalls, is changed into an anodized layer and this anodized layer forms an electrical insulating layer 10.</p> |
