发明名称 |
MANUFACTURE OF POLYCRYSTALLINE THIN FILM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline metallic thin film, such as a silicon whose crystal grains are large. SOLUTION: This is a method for manufacturing a metal thin film by accumulating metallic atoms 4 on a substrate 5. The metallic atoms 4 are accumulated on the substrate 5, and the surface of the substrate 5 or the accumulated metallic thin film is irradiated with laser beams 7, so that the accumulated metallic atoms or the accumulated metal thin film can be excited. Then, the crystals of the metal thin film are made roughly large so that the roughly large polycrystalline thin film can be formed.</p> |
申请公布号 |
JP2000133591(A) |
申请公布日期 |
2000.05.12 |
申请号 |
JP19980304288 |
申请日期 |
1998.10.26 |
申请人 |
TOYOTA CENTRAL RES & DEV LAB INC |
发明人 |
AZUMA HIROZUMI;ITO TADASHI;KAGEYAMA YASUYUKI |
分类号 |
H01L31/04;H01L21/20;H01L21/268;H01L21/285;(IPC1-7):H01L21/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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