发明名称 MANUFACTURE OF POLYCRYSTALLINE THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline metallic thin film, such as a silicon whose crystal grains are large. SOLUTION: This is a method for manufacturing a metal thin film by accumulating metallic atoms 4 on a substrate 5. The metallic atoms 4 are accumulated on the substrate 5, and the surface of the substrate 5 or the accumulated metallic thin film is irradiated with laser beams 7, so that the accumulated metallic atoms or the accumulated metal thin film can be excited. Then, the crystals of the metal thin film are made roughly large so that the roughly large polycrystalline thin film can be formed.</p>
申请公布号 JP2000133591(A) 申请公布日期 2000.05.12
申请号 JP19980304288 申请日期 1998.10.26
申请人 TOYOTA CENTRAL RES & DEV LAB INC 发明人 AZUMA HIROZUMI;ITO TADASHI;KAGEYAMA YASUYUKI
分类号 H01L31/04;H01L21/20;H01L21/268;H01L21/285;(IPC1-7):H01L21/20 主分类号 H01L31/04
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