发明名称 SOLID-STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain high conversion gain by constituting solid-state imaging device of a second transistor for supplying a rated current being proportional to a rated current bias voltage to a part between a first node and a second power source, controlling the node voltage of the second node based on the output voltage of a voltage amplifier circuit, which is outputted from the first node, and varying the input capacitance of the voltage amplifier circuit. SOLUTION: A source follower circuit 7 is constituted of the transistors M11 and M12. In the meantime, a power source voltage varying part 8 is constituted of the transistors M13 an M14 forming the source follower circuit and a voltage coupling capacitor C. The drain of the transistor M13 is connected to the first power source VDD, the source is to the node N3 and the gate is to an output terminal 4. The node N3 is connected to the node N2 with the capacitor C. Then the voltage VDD' of the node N2 is varied by the AC component of an output voltage which is fed-back by the capacitor C.
申请公布号 JP2000134505(A) 申请公布日期 2000.05.12
申请号 JP19990263998 申请日期 1999.09.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU SHOSHOKU
分类号 H04N5/14;H01L27/148;H03F3/50;H04N5/335;H04N5/372;H04N5/378;(IPC1-7):H04N5/14 主分类号 H04N5/14
代理机构 代理人
主权项
地址