| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture method of a semiconductor laser for surely leaving an oxide film on top of an optical waveguide in a mesa form, which is formed on a semiconductor substrate, eliminating a feature defect occurred in a later manufacture process and improving the manufacture yield. SOLUTION: A process where a mesa 5 is formed on a semiconductor substrate 1 and the formation of an entire oxide film 13 and the etching of the entire face are repeated at least not less than twice is provided. The oxide film is deposited on the semiconductor substrate, in a state where bias voltage is applied and the entire face is etched. The oxide film is deposited on the semiconductor substrate in the state of non-bias, and the oxide film is stacked in a state where bias voltage is applied and the entire face is etched.
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