| 摘要 |
<p>PROBLEM TO BE SOLVED: To speed up film formation for obtaining good film quality at manufacturing a silicon group thin-film photoelectric transfer layer comprising crystalline on a low-cost substrate at a low temperature by means of plasma CVD method. SOLUTION: In a photoelectric transfer device provided with a silicon group thin-film photoelectric transfer layer which includes crystalline, when the photoelectric transfer layer is deposited by plasma DVD method, the area of a part contributing to plasma generation at an electrode on one side is made smaller than a film-formation region area, while at least either one of substrate or electrode is so moved that the plasma covers the entire film-formation region in a process for forming the photoelectric transfer layer, for forming the photoelectric transfer layer evenly over the entire film-formation region, resulting in high performance and low cost of the silicon group thin-film photoelectric transfer device.</p> |
