| 摘要 |
PROBLEM TO BE SOLVED: To realize a variable wavelength light-emitting device where a crystal is less distorted by a method, wherein the active layer of direct transition semiconductor possessed of magnetic moment is sandwiched in between a P-N junction of a semiconductor with an energy forbidden handwidth larger than that of the direct transition semiconductor. SOLUTION: A β-FeSi2 epitaxial layer 2 is grown epitaxially as an active layer on an N-type Si substrate 1. Then, the β-FeSi2 epitaxial layer 2 is annealed in an ultrahigh vacuum to be agglomerated into island-like FeSi2 2'. Successively, a non-doped Si is epitaxially grown by a molecular-beam epitaxy method, and furthermore the island-like β-FeSi2 2' is so agglomerated into β-FeSi2 2" of spherical shape as to be embedded in a non-doped single-crystal Si layer 3. Finally, metaboric acid is irradiated with a molecular beam at the same time, in an Si molecular-beam epitaxy process to form a P-type Si layer 4. With this setup, crystal is distorted less, and the β-FeSi2 balls 2" can stably keep its characteristics as an active layer. |
