| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device that speeds up processing by enhancing plasma density and prevents the generation of particles by preventing the accumulation of a deposited substance on the inside wall of the closed end of a plasma generation container. SOLUTION: Plasma P is formed by feeding high-frequency power from a power feeding system 3 to a gas introduced, by a gas introducing system 21, into a dielectric plasma generation container 2 of which one end is an opening and the other end is a closed end part. The plasma P diffuses in a processing container 1 communicating with the plasma generation container 2 through its opening, and thereby, predetermined processing is applied to the surface of a substrate 9 arranged in the processing container 1. The power feeding system 3 is provided with an annular antenna 32 surrounding the plasma generation container 2, and a distance (d) in the axial direction between the annular antenna 32 and the farthest point from the annular antenna 32 out of the inside surface of the closed end part is 1 cm to 6 cm. The plasma P is generated in a region where inductive coupling is strong, so that the plasma density is enhanced and no deposit develops on the inside surface of the closed end part, and the high density plasma P never locally concentrates, so that the abrasion of the plasma generation container 2 never occurs. |
