| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor element whose ON-resistance is low. SOLUTION: This high breakdown voltage semiconductor element has a part where N-type layers and P-type layers are alternately and regularly repeated and arranged between a low resistance layer 11 on the high potential side and a low resistance layer 13 on the low potential side. The N-type P-type layers stretch and exist in the direction connecting the low resistance layer on the high potential side with the low resistance layer on the low potential side. When a high voltage is applied, the alternating N-type P-type layers are turned into depletion and support the high voltage. This semiconductor element has a part where heavily-doped N-type layers 16 and heavily-doped P-type layers 15 are repeatedly in contact with each other. At least between the heavily-doped N-type layers or between the heavily-doped P-type layers, semiconductor layers 10 of lightly-doped or insulating layers 14 are interposed. |
