MANUFACTURE OF THIN FILM ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film element in which the generation of any damage can be suppressed by allowing stable etching to progress even at the time of forming the thin film element by using reactive ion etching on an insulating substrate. SOLUTION: At the time of forming a thin film element by a method for manufacturing the thin film comprising at least a process for forming a conductive film on an insulating substrate 1 and a process for carrying out working by using reactive ion etching, the reactive ion etching is operated in a state that any conductive film is not present at the side peripheral part or peripheral edge part of a substrate edge part 11A (or the presence of any conductive film is suppressed).