发明名称 THIN FILM FORMING METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURING METHOD
摘要 <p>A thin film (27) is deposited on the surface of a specimen (21) by an ECR plasma method through reaction between a plasma produced from reactive gas over the surface of the specimen (21) and atoms or molecules dissociated from a solid target material (23) by the collision of the plasma, after the surface of the solid target material (23) is cleaned with the plasma of the reactive gas.</p>
申请公布号 WO2000026953(P1) 申请公布日期 2000.05.11
申请号 JP1999005692 申请日期 1999.10.15
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