| 摘要 |
<p>A sputtering apparatus includes a plurality of ringlike targets arranged coaxially above a process chamber. A pedestal for holding a semiconductor substrate is provided in the processing chamber, and the pedestal and the targets are connected to a DC power supply. The process chamber is connected with a vacuum pump for evacuation and also with a gas supply that introduces gas, usually argon, for plasma generation. The potentials at the targets are independently controlled to adjust the sputtering rates on the targets, and the uniformity of deposition can be improved.</p> |
