发明名称 |
METHOD AND APPARATUS FOR MEASURING SUBSTRATE LAYER THICKNESS DURING CHEMICAL MECHANICAL POLISHING |
摘要 |
The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range. |
申请公布号 |
WO0026609(A2) |
申请公布日期 |
2000.05.11 |
申请号 |
WO1999US25214 |
申请日期 |
1999.10.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WISWESSER, ANDREAS, NORBERT;SCHOENLEBER, WALTER;SWEDEK, BOGUSLAW |
分类号 |
B24B37/04;B24B49/12;B24D7/12;G01B11/06;H01L21/66 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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