| 摘要 |
<p>A semiconductor wafer comprising a semiconductor monocrystalline substrate having a diameter of 300 mm or more and a semiconductor thin film formed on a major surface of the substrate and having a uniform resistivity and a method for producing such a semiconductor wafer are disclosed. Process gases are fed parallel in one direction onto a major surface of a rotating silicon monocrystalline substrate (12) through six inlet ports (18a, 18b, ..., 18f) provided in the direction of the width of a reaction vessel (10). H2, gas, a semiconductor source gas and a dopant gas are fed over the central and intermediate portions of the major surface of the substrate (12) through the inner inlet ports (18a, 18b) and the middle inlet ports (18c, 18d); the H2 gas and the semiconductor source gas, not the dopant gas, are fed over the peripheral portions through the outer inlet ports (18e, 18f). However, fraction of the dopant gas is fed to the peripheral portion because of the autodoping phenomena. The concentration of dopant gas supplied to the entire major surface of the substrate (12) is substantially uniform in terms of the total amount of dopant gas supplied in the two ways.</p> |
