发明名称 HIGH PURITY GALLIUM FOR PREPARATION OF COMPOUND SEMICONDUCTOR, AND METHOD AND APPARATUS FOR PURIFYING THE SAME
摘要 <p>A method for separating impurities from a gallium material containing impurities, which comprises providing the gallium material in a liquid state in a container, allowing the coagulation of gallium to proceed gradually from the surface of the inner wall of the container toward center portion thereof, in a manner such that a cylinder formed by a coagulation interface gradually reduces in its diameter, separating a liquid phase remaining in the central portion from a coagulated phase before the coagulation of the whole material in the container and repeating the above-described procedure using the resultant coagulated phase as a gallium material until a desired purity is achieved. The formation of a gallium product having a purity suitable to preparation of a compound semiconductor can be confirmed by determining the concentrations of impurities in a Ga material being separated from the coagulated phase and containing condensed impurities.</p>
申请公布号 WO2000026422(P1) 申请公布日期 2000.05.11
申请号 JP1999005943 申请日期 1999.10.27
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