FABRICATION OF A TRANSISTOR HAVING AN ULTRA-THIN GATE DIELECTRIC

摘要

A transistor of an integrated circuit includes a high K gate dielectric (224) that was converted from a metal. A first dielectric layer (112) consisting of a nitride is blanket deposited across active (102) and isolation (104) regions of a substrate (100). A metal layer (122) is then blanket deposited upon the first dielectic layer (112). The metal layer (122) is then transformed into a second dielectric layer (124). In a described embodiment, the metal layer (122) is formed of tungsten and the second dielectric layer (124) is formed of tungsten trioxide. The tungsten trioxide serves as a thin dielectric having a dielectric constant in the range of K=500. A gate conductor layer (202) is then deposed and the gate conductor layer (202), the first dielectric layer (112) and the second dielectric layer (124) are then patterned and etched to produce gate conductor/gate dielectric structures.