发明名称 WORD LINE DRIVER FOR SEMICONDUCTOR MEMORIES
摘要 <p>A hierarchical word line driving structure uses a shared inverter circuit architecture which allows for lower power consumption and a pulsed control signal to ensure accurate memory retrieval. The shared inverter word line structure includes a row decoder, a first sub-word line driver, a second sub-word line driver, and an interconnect line. The first sub-word line driver includes an inverting circuit for inverting the signal propagating along the global word line, while the second sub-word line driver does not. The interconnect line is coupled between the first and second sub-word line drivers to communicate the inverted signal therebetween. A pulsed control signal is supplied to clamping transistors connected to unselected word lines to ensure they remain clamped to ground.</p>
申请公布号 WO2000026941(A2) 申请公布日期 2000.05.11
申请号 US1999023694 申请日期 1999.10.12
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