发明名称 SEMICONDUCTOR HAVING LARGE VOLUME FRACTION OF INTERMEDIATE RANGE ORDER MATERIAL
摘要 <p>A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.</p>
申请公布号 EP0953214(A4) 申请公布日期 2000.05.10
申请号 EP19970950967 申请日期 1997.12.11
申请人 ENERGY CONVERSION DEVICES, INC.;UNITED SOLAR SYSTEMS CORPORATION 发明人 OVSHINSKY, STANFORD, R.;GUHA, SUBHENDU;YANG, CHI-CHUNG;DENG, XUNMING;JONES, SCOTT
分类号 C23C16/24;H01L21/205;H01L21/336;H01L29/786;H01L29/861;H01L31/02;H01L31/028;H01L31/04;H01L31/20;(IPC1-7):H01L31/028;H01L31/036;H01L31/037;H05H1/24 主分类号 C23C16/24
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