| 摘要 |
A thin film electroluminescent device has a bottom substrate and a first electrode layer deposited on the bottom substrate. The first insulating layer is deposited on the first electrode layer. A phosphor layer is deposited on the first insulating layer. A second insulating layer is deposited on the phosphor layer. A second electrode layer is deposited on the second insulating layer. In one aspect of the invention, at least a portion of the first insulating layer includes a layer of aluminum titanium oxide, and at least a portion of the second insulating layer includes a layer of a fusing dielectric material. In another aspect of the invention, the first insulating layer includes a layer of a refractory metal oxide deposited using DC reactive sputtering, and the second insulating layer includes a layer of a fusing dielectric material. In another aspect of the invention, the first insulating layer includes a refractory metal oxide layer, the metal oxide selected from the group consisting of zirconia, hafnia, tantala and niobium oxide, the first insulating layer further including a barrier layer between the first electrode layer and the refractory metal oxide layer, and a second barrier layer between the metal oxide layer and the phosphor layer. In yet another aspect of the invention, the second insulating layer includes a layer of a fusing dielectric material and a phosphor interface layer. |
