Article comprising an oxide layer on a GaAs-Based semiconductor body, and method of making the article

摘要

Disclosed are articles that comprise an oxide layer on a GaAs-based semiconductor body, with metal layers on the oxide and the body facilitating application of an electric field across the oxide layer. The interface between the oxide and the semiconductor body is of device quality. Contrary to teachings of the prior art, the oxide is not essentially pure Ga2 O3, but instead has composition GaxAy,Oz, where A is an electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state. Futhermore, x ≥ 0, z is selected to satisfy the requirement that both Ga and A is substantially fully oxidized and y/(x+y) is greater than 0.1. A typically is selected from Sc, Y, the rare earth elements and the alklaine earth elements. Articles according to the invention exemplarily comprise a planar enchancement mode MOS-FET with inversion channel. A method of making articles as described above is also disclosed.