发明名称 |
LARGE-SCALE MICROWAVE HYBRID INTEGRATED CIRCUIT |
摘要 |
FIELD: semiconductor microelectronics. SUBSTANCE: integrated circuit has board with depression on its underside under base ridge; holes of definite size are provided in depression bottom; upper chip-free part of base ridge is electrically connected with depression bottom; some of contact pads of chip are grounded through holes in depression bottom; distance between chip and walls of holes mounting it and that between chip hole and grounding hole are less than 150 mcm. EFFECT: improved electric characteristics, reduced mass and size, facilitated manufacture. 4 cl, 6 dwg |
申请公布号 |
RU2148872(C1) |
申请公布日期 |
2000.05.10 |
申请号 |
RU19980111687 |
申请日期 |
1996.09.26 |
申请人 |
SAMSUNG EHLEKTRONIKS KO., LTD.;IOVDAL'SKIJ VIKTOR ANATOL'EVICH |
发明人 |
IOVDAL'SKIJ V.A.;AJZENBERG EH.V.;BEJL' V.I. |
分类号 |
H01L23/12;H01L23/13;H01L23/66;H01L25/16;H01L27/02 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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