发明名称 LARGE-SCALE MICROWAVE HYBRID INTEGRATED CIRCUIT
摘要 FIELD: semiconductor microelectronics. SUBSTANCE: integrated circuit has board with depression on its underside under base ridge; holes of definite size are provided in depression bottom; upper chip-free part of base ridge is electrically connected with depression bottom; some of contact pads of chip are grounded through holes in depression bottom; distance between chip and walls of holes mounting it and that between chip hole and grounding hole are less than 150 mcm. EFFECT: improved electric characteristics, reduced mass and size, facilitated manufacture. 4 cl, 6 dwg
申请公布号 RU2148872(C1) 申请公布日期 2000.05.10
申请号 RU19980111687 申请日期 1996.09.26
申请人 SAMSUNG EHLEKTRONIKS KO., LTD.;IOVDAL'SKIJ VIKTOR ANATOL'EVICH 发明人 IOVDAL'SKIJ V.A.;AJZENBERG EH.V.;BEJL' V.I.
分类号 H01L23/12;H01L23/13;H01L23/66;H01L25/16;H01L27/02 主分类号 H01L23/12
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