In-situ deposition of stop layer and dielectric layer during formation of local interconnects

摘要

An in-situ deposition method allows for the forming of a dielectric layer suitable for use in forming a conductive path in a semiconductor wafer. The method includes depositing a thin SiOxNy stop layer on top of a semiconductor wafer within a chemical vapor deposition (CVD) reactor chamber having a low pressure, maintaining the low pressure following the deposition of the SiOxNy stop layer, and then depositing a thick TEOS oxide dielectric layer on the SiOxNy stop layer within the CVD reactor chamber. The in-situ deposition process reduces outgassing defects that would normally form at the interface between the SiON stop layer and the TEOS oxide dielectric layer.